Isaak Mayergoyz
Isaak Mayergoyz received his Master and Ph.D. degrees in the former Soviet Union where he worked as a senior research scientist in the Institute of Cybernetics of Ukranian Academy of Sciences before his emigration to the United States. On his arrival to the United States in 1980, he became a full professor of the Electrical and Computer Engineering Department of University of Maryland, College Park. In cooperation with Prof. Fawzi Emad, he established the electric power engineering curriculum and educational program in the ECE Department and has maintained it for more than 30 years. For many years, he served as a consultant for the Research and Development Center of General Electric Company and has been selected as a visiting research fellow of this center. He has authored and coauthored 11 books and over 350 scientific papers. He is a Fellow of IEEE (1988), Visiting Research Fellow of GE Research and Development Center (1988), Distinguished Lecturer of the IEEE Magnetics Society (1994), Distinguished Scholar-Teacher of University of Maryland, College Park (1994) and a recipient of Outstanding Teacher Award of College of Engineering (1987). In 2009, he received the Achievement Award of the Institute of Electrical and Electronics Engineers (IEEE) Magnetics Society, the highest award given by the society. He has served on numerous IEEE committees, editorial boards of scientific journals and as the Editor of Academic Press-Elsevier Electromagnetism series.
Publications
2010
2010. On Stability of Magnetization Dynamics in Nanoparticles. Magnetics, IEEE Transactions on. 46(6):1718-1721.
2010. Common Mode Analysis of Ethernet Transformers. Magnetics Letters, IEEE. 1
2010. Electromagnetic Modeling of Ethernet Transformers. Magnetics, IEEE Transactions on. 46(2):563-569.
2009
2009. Analytical Description of Quasi-Random Magnetization Relaxation to Equilibrium. Magnetics, IEEE Transactions on. 45(11):5224-5227.
2009. Electromagnetic Analysis of Plasmon-Resonance Based All-Optical Magnetic Recording. Magnetics, IEEE Transactions on. 45(3):1634-1637.
2009. Modeling and Testing of Ethernet Transformers. Magnetics, IEEE Transactions on. 45(10):4793-4796.
2009. Nonlinear Resonant and Chaotic Dynamics in Microwave Assisted Magnetization Switching. Magnetics, IEEE Transactions on. 45(10):3950-3953.
2007
2007. Numerical Analysis of Plasmon Resonances in Metallic Nanoshells. Magnetics, IEEE Transactions on. 43(4):1689-1692.
2007. Numerical Analysis of Plasmon Resonances in Nanoparticles Based on Fast Multipole Method. Magnetics, IEEE Transactions on. 43(4):1465-1468.
2007. Numerical Analysis of Nanoparticle-Structured Plasmon Waveguides of Light. Magnetics, IEEE Transactions on. 43(4):1685-1688.
2006
2006. Scalar Preisach Models of Hysteresis. The Science of Hysteresis: Mathematical modeling and applications. 1:293-293.
2006. Numerical analysis of plasmon resonances in nanoparticles. Magnetics, IEEE Transactions on. 42(4):759-762.
2006. Numerical Analysis of Plasmon Resonances Based on Fast Multipole Method. Electromagnetic Field Computation, 2006 12th Biennial IEEE Conference on. :459-459.
2006. Vector Preisach models of hysteresis. The Science of Hysteresis: Mathematical modeling and applications. 1:447-447.
2005
2005. Forensic recovery of hard disk data by using the spin-stand imaging technique. Proceedings of SPIE. 5778(1):595-606.
2004
2004. Finite-element computation of nonlinear magnetic diffusion and its effects when coupled to electrical, mechanical, and hydraulic systems. Magnetics, IEEE Transactions on. 40(2):537-540.
2004. A novel approach to removing intersymbol interference from spin-stand images. Magnetics, IEEE Transactions on. 40(4):2197-2199.
2003
2003. Critical fields and pulse durations for precessional switching of thin magnetic films. Magnetics, IEEE Transactions on. 39(5):2504-2506.
2003. Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices. Solid-State Electronics. 47(11):2055-2061.
2003. Geometrical analysis of precessional switching and relaxation in uniformly magnetized bodies. Magnetics, IEEE Transactions on. 39(5):2501-2503.
2003. Mathematical models of hysterisis and their applications (2003). Recherche. 67:02-02.
2002
2002. Perturbation technique for LLG dynamics in uniformly magnetized bodies subject to RF fields. Magnetics, IEEE Transactions on. 38(5):2403-2405.
2001
2000
2000. Numerical simulation of small-signal microwave performance of 4H–SiC MESFET. Solid-State Electronics. 44(7):1281-1287.
2000. Resolution enhancement by applying MFM under UHV conditions. Magnetics, IEEE Transactions on. 36(5):2975-2977.
2000. A model for magnetic aftereffect in the presence of time varying demagnetizing fields. Magnetics, IEEE Transactions on. 36(5):3182-3184.
1999
1999. Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness. Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :247-250.
1999. Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics. Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :167-170.
1998
1998. Hydrodynamic Device Simulation with New State Variables Specially Chosen a Block Gummel Iterative Approach. VLSI DESIGN. 6(1-4):191-195.
1998. Extension of Spherical Harmonic Method to RF Transient Regime. Simulation of semiconductor processes and devices 1998: SISPAD 98. :42-42.
1998. A New Method to Recover Vectorial Electric Fields and Current Densities from Unstructured Meshes. VLSI DESIGN. 6(1/4):117-122.
1998. 3-D Device Simulation Using Intelligent Solution Method Control. VLSI DESIGN. 6(1/4):267-272.
1998. Three-Dimensional Hydrodynamic Modeling of MOSFET Devices. VLSI Design. 6(1-4):261-265.
1997
1997. 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations. Electron Devices, IEEE Transactions on. 44(2):257-267.
1996
1996. Simulation of the logic switching characteristics of hot-carrier-degraded ultra-thin SOI CMOS inverters. Solid-State Electronics. 39(11):1669-1674.
1996. A three-dimensional MOSFET solver implementing the fixed point iteration technique. Solid-State Electronics. 39(1):147-157.
1995
1995. Switching as an exit problem. Magnetics, IEEE Transactions on. 31(6):3545-3547.
1994
1994. Calculation of head sensitivity function from 3-D magnetic fields. Magnetics, IEEE Transactions on. 30(6):4278-4280.
1994. Simulation of the transient characteristics of partially- and fully-depleted SOI MOSFETs. Solid-State Electronics. 37(7):1387-1394.
1994. A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on. 13(8):1035-1044.
1994. The input dependent Preisach model with stochastic input as a model for aftereffect. Magnetics, IEEE Transactions on. 30(6):4368-4370.
1993
1993. RF scattering and radiation by using a decoupled Helmholtz equation approach. Magnetics, IEEE Transactions on. 29(2):2040-2042.
1993. A new point of view on the mathematical structure of Maxwell's equations. Magnetics, IEEE Transactions on. 29(2):1315-1320.
1991
1991. Data parallel algorithms for the numerical modeling of semiconductor devices. Proceedings of the 5th SIAM Conference on Parallel Processing for Scientific Computing. :394-400.
1990
1990. Parallel algorithm for the solution of nonlinear poisson equation of semiconductor device theory and its implementation on the IVIPP. Journal of Parallel and Distributed Computing. 8(2):161-168.
1990. Investigation of the threshold voltage of MOSFETs with position and potential-dependent interface trap distributions using a fixed-point iteration method. Electron Devices, IEEE Transactions on. 37(4):1031-1038.
1989
1989. A numerical analysis for the small-signal response of the MOS capacitor. Solid-State Electronics. 32(3):207-213.
1987
1987. TIME PERTURBATION ANALYSIS FOR THE MOS SYSTEM. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 6(2):77-83.